IRFBC30ALPBF Vishay, IRFBC30ALPBF Datasheet - Page 2

• Manufacturer Part Number: IRFBC30ALPBF
• Description: MOSFET N-CH 600V 3.6A TO-262
• Manufacturer: Vishay

Specifications of IRFBC30ALPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 510pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 2.2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 74000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 3.6A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 2.2ohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFBC30ALPBF

IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. C
d. Uses IRFBC30A/SiHFBC30A data and test conditions.
www.vishay.com
2
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
oss
Temperature Coefficient
eff. is a fixed capacitance that gives the same charging time as C
a
J
= 25 °C, unless otherwise noted)
a
SYMBOL
SYMBOL
V
C
R
V
oss
t
t
C
C
R
I
I
C
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
t
SM
t
I
t
t
on
DS
oss
oss
SD
thJA
thJC
iss
rss
S
gs
gd
rr
fs
r
f
g
rr
eff.
/T
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
V
J
GS
GS
R
V
GS
= 25 °C, I
DS
g
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
Reference to 25 °C, I
J
= 10 V
= 10 V
= 12 , R
= 0 V
= 480 V, V
= 25 °C, I
V
V
V
V
f = 1.0 MHz, see fig. 5
V
TYP.
TEST CONDITIONS
DD
DS
DS
GS
oss
DS
-
-
F
= 300 V, I
= 600 V, V
= V
= 0 V, I
V
= 50 V, I
while V
= 3.6 A, dI/dt = 100 A/μs
V
V
D
GS
DS
V
S
V
GS
GS
I
GS
= 82 , see fig. 10
DS
D
DS
= 3.6 A, V
= ± 30 V
V
= 25 V,
, I
= 3.6 A, V
= 0 V,
see fig. 6 and 13
= 0 V, T
= 480 V, f = 1.0 MHz
DS
= 1.0 V, f = 1.0 MHz
D
D
DS
D
= 250 μA
D
= 250 μA
= 0 V to 480 V
I
GS
D
= 2.2 A
is rising from 0 to 80 % V
= 3.6 A,
= 2.2 A
D
= 0 V
= 1 mA
GS
J
DS
= 125 °C
G
= 0 V
= 480 V,
b
d
b, d
MAX.
b
b
D
S
1.7
c
40
b,
MIN.
600
2.0
2.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DS
S10-2433-Rev. B, 25-Oct-10
.
Document Number: 91109
TYP.
0.67
510
730
400
3.5
9.8
1.1
70
19
31
13
19
12
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
250
600
4.5
2.2
5.4
3.6
1.6
1.7
S
25
23
11
14
-
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nC
μC
nA
μA
pF
ns
ns

S
A
V
V
V