IRFD420PBF Vishay, IRFD420PBF Datasheet - Page 2

• Manufacturer Part Number: IRFD420PBF
• Description: MOSFET N-CH 500V 370MA 4-DIP
• Manufacturer: Vishay

Specifications of IRFD420PBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 220mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 370mA
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 360pF @ 25V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Resistance Drain-source Rds (on): 3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.37 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 370mA
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 3ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFD420PBF

IRFD420, SiHFD420
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
= 25 °C, unless otherwise noted)
a
SYMBOL
SYMBOL
V
R
V
t
t
C
I
I
C
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
L
t
L
SM
t
I
t
t
on
DS
oss
SD
thJA
iss
rss
S
gs
gd
rr
fs
r
f
D
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
J
GS
GS
V
T
= 25 °C, I
DS
Intrinsic turn-on time is negligible (turn-on is dominated by L
J
Reference to 25 °C, I
= 10 V
= 10 V
= 25 °C, I
= 400 V, V
V
R
V
V
V
V
TYP.
TEST CONDITIONS
DD
g
DS
DS
DS
GS
= 18 , R
-
= 250 V, I
F
= 500 V, V
= V
= 50 V, I
= 0 V, I
V
= 2.1 A, dI/dt = 100 A/μs
f = 1.0 MHz
V
V
GS
S
DS
I
GS
GS
GS
D
= 0.37 A, V
= ± 20 V
= 25 V,
= 2.1 A, V
, I
= 0 V,
= 0 V, T
D
D
D
D
= 250 μA
I
D
= 250 μA
= 120 
D
GS
= 1.3 A
= 2.1 A,
= 0.22 A
D
= 0 V
J
= 1 mA
GS
DS
= 125 °C
G
G
b
b
= 0 V
= 400 V
b
MAX.
D
S
b
120
D
S
b
b
MIN.
500
2.0
1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-2463-Rev. C, 08-Nov-10
Document Number: 91135
TYP.
0.59
0.70
360
260
8.0
8.6
4.0
6.0
92
37
33
16
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.37
250
520
4.0
3.0
3.3
5.0
1.6
1.4
S
25
24
13
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nC
nH
μC
nA
μA
pF
ns
ns

S
A
V
V
V