IRF830ASPBF Vishay, IRF830ASPBF Datasheet - Page 5

• Manufacturer Part Number: IRF830ASPBF
• Description: MOSFET N-CH 500V 5A D2PAK
• Manufacturer: Vishay

Specifications of IRF830ASPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.4 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 620pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 1.4 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 1.4ohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF830ASPBF

Document Number: 91062
S-81352-Rev. A, 16-Jun-08
91062_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
91062_11
5.0
4.0
3.0
2.0
1.0
0.0
Fig. 12a - Unclamped Inductive Test Circuit
25
R
20 V
G
10
V
0.1
10
DS
-2
1
10
t
p
50
-5
D = 0.50
0.20
0.10
0.05
0.02
0.01
T
C
, Case Temperature (°C)
I
AS
D.U.T.
0.01 Ω
L
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Single Pulse
(Thermal Response)
10
-4
15 V
IRF830AS, IRF830AL, SiHF830AS, SiHF830AL
Driver
125
+
- V
DD
t
A
1
150
, Rectangular Pulse Duration (s)
10
-3
10
-2
Fig. 12b - Unclamped Inductive Waveforms
I
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
Notes:
1. Duty Factor, D = t
2. Peak T
d(on)
V
0.1
DS
t
r
j
t
= P
P
p
DM
DM
D.U.T.
x Z
t
Vishay Siliconix
R
1
1
thJC
/t
D
2
t
d(off)
V
t
+ T
2
DS
C
1
t
f
+
-
www.vishay.com
V
DD
5