SUM45N25-58-E3 Vishay, SUM45N25-58-E3 Datasheet - Page 4

MOSFET N-CH 250V 45A D2PAK

SUM45N25-58-E3

Manufacturer Part Number
SUM45N25-58-E3
Description
MOSFET N-CH 250V 45A D2PAK
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SUM45N25-58-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
58 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
45A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
140nC @ 10V
Input Capacitance (ciss) @ Vds
5000pF @ 25V
Power - Max
3.75W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.058 Ohm @ 10 V
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
45 A
Power Dissipation
3750 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
45A
Drain Source Voltage Vds
250V
On Resistance Rds(on)
62mohm
Rds(on) Test Voltage Vgs
30V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SUM45N25-58-E3
SUM45N25-58-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUM45N25-58-E3
Manufacturer:
INTERSIL
Quantity:
5 623
Part Number:
SUM45N25-58-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SUM45N25-58-E3
0
Company:
Part Number:
SUM45N25-58-E3
Quantity:
2 500
SUM45N25-58
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
2.8
2.4
2.0
1.6
1.2
0.8
0.4
100
0.00001
0.1
10
- 50 - 25
1
On-Resistance vs. Junction Temperature
V
I
D
I
AV
GS
= 20 A
(A) at T
0.0001
= 10 V
T
Avalanche Current vs. Time
0
J
- Junction Temperature (°C)
A
25
= 150 °C
0.001
50
I
t
AV
in
(A) at T
(Sec)
75
0.01
A
100
= 25 °C
125
0.1
150
New Product
175
1
100
300
290
280
270
260
250
240
230
10
1
0
- 50 - 25
Source-Drain Diode Forward Voltage
V
SD
T
vs. Junction Temperature
0
Drain Source Breakdown
0.3
J
- Source-to-Drain Voltage (V)
T
- Junction Temperature (°C)
I
J
D
25
= 150 °C
= 1.0 mA
50
0.6
S-70311-Rev. C, 12-Feb-07
Document Number: 72314
75
100
T
0.9
J
125
= 25 °C
150
175
1.2

Related parts for SUM45N25-58-E3