IRL630SPBF Vishay, IRL630SPBF Datasheet - Page 8

• Manufacturer Part Number: IRL630SPBF
• Description: MOSFET N-CH 200V 9A D2PAK
• Manufacturer: Vishay

Specifications of IRL630SPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 5.4A, 5V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.4 Ohm @ 5 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 9 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 9A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 400mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: 2V
• Fall Time: 33 ns
• Rise Time: 57 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRL630SPBF

TO-263AB (HIGH VOLTAGE)
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
Document Number: 91364
Revision: 15-Sep-08
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
outmost extremes of the plastic body at datum A.
DIM.
A1
b1
b2
b3
c1
c2
A
D
b
c
4
(Datum A)
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.38
L1
L2
D
MILLIMETERS
B
B
2 x e
Lead tip
1
3
B
B
MAX.
4
4.83
0.25
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
E
2
C
4
3
C
2 x b
2 x b2
0.010
A
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.330
H
MIN.
5
M
INCHES
A
Plating
M
(c)
B
Section B - B and C - C
Detail A
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
Scale: none
b1, b3
(b, b2)
5
± 0.004
c
A
c1
c2
Base
metal
M
B
5
B
A
A
DIM.
D1
E1
L1
L2
L3
L4
H
E
e
L
0° to 8°
L3
Gauge
plane
14.61
MIN.
6.86
9.65
6.22
1.78
4.78
MILLIMETERS
-
-
Package Information
2.54 BSC
0.25 BSC
Rotated 90° CW
L
View A - A
scale 8:1
Detail “A”
L4
E1
E
MAX.
10.67
15.88
2.79
1.65
1.78
5.28
-
-
D1
Vishay Siliconix
4
H
A1
4
0.270
0.380
0.245
0.575
0.070
0.188
MIN.
B
-
-
0.100 BSC
0.010 BSC
Seating plane
INCHES
www.vishay.com
MAX.
0.420
0.625
0.110
0.066
0.070
0.208
-
-
1