IRFD9220PBF Vishay, IRFD9220PBF Datasheet - Page 7

• Manufacturer Part Number: IRFD9220PBF
• Description: MOSFET P-CH 200V 560MA 4-DIP
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFD9220PBF

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 340mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 560mA
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 340pF @ 25V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Resistance Drain-source Rds (on): 1.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.56 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: -560mA
• Drain Source Voltage Vds: -200V
• On Resistance Rds(on): 1.5ohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 1.5Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 4
• Package Type: HexDIP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFD9220PBF

Document Number: 91141
Re-Applied
Voltage
Reverse
Recovery
Current
+
-
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
GS
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
•
•
•
Diode Recovery
SD
Current
dv/dt
Forward Drop
•
•
•
di/dt
D =
-
G
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
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