IRFBC30LPBF Vishay, IRFBC30LPBF Datasheet - Page 4

MOSFET N-CH 600V 3.6A TO-262

IRFBC30LPBF

Manufacturer Part Number
IRFBC30LPBF
Description
MOSFET N-CH 600V 3.6A TO-262
Manufacturer
Vishay
Datasheets

Specifications of IRFBC30LPBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.2 Ohm @ 2.2A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
3.6A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
31nC @ 10V
Input Capacitance (ciss) @ Vds
660pF @ 25V
Power - Max
3.1W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
2.2 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.6 A
Power Dissipation
3100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
3.6A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
2.2ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFBC30LPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFBC30LPBF
Quantity:
70 000
IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
Document Number: 91111
4
S10-2433-Rev. B, 25-Oct-10

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