IRFI9640GPBF Vishay, IRFI9640GPBF Datasheet

MOSFET P-CH 200V 6.1A TO220FP

IRFI9640GPBF

Manufacturer Part Number
IRFI9640GPBF
Description
MOSFET P-CH 200V 6.1A TO220FP
Manufacturer
Vishay
Datasheets

Specifications of IRFI9640GPBF

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 3.7A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
6.1A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
44nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.5 Ohm @ 10 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.1 A
Power Dissipation
40000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
-6.1A
Drain Source Voltage Vds
-200V
On Resistance Rds(on)
500mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFI9640GPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFI9640GPBF
Manufacturer:
IR
Quantity:
14 320
Company:
Part Number:
IRFI9640GPBF
Quantity:
22 100
Company:
Part Number:
IRFI9640GPBF
Quantity:
22 100
Company:
Part Number:
IRFI9640GPBF
Quantity:
70 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91169
S09-0010-Rev. A, 19-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
TO-220 FULLPAK
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ - 11 A, dI/dt ≤ 150 A/µs, V
= - 50 V, starting T
(Ω)
a
G
J
= 25 °C, L = 26 mH, R
D
c
a
a
S
V
b
DD
GS
≤ V
= - 10 V
G
DS
P-Channel MOSFET
, T
Single
- 200
J
7.1
44
27
≤ 150 °C.
G
S
D
= 25 Ω, I
C
Power MOSFET
V
= 25 °C, unless otherwise noted
0.50
GS
at - 10 V
6-32 or M3 screw
AS
= - 6.1 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-220 FULLPAK
IRFI9640GPbF
SiHFI9640G-E3
IRFI9640G
SiHFI9640G
= 100 °C
= 25 °C
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kV
• Sink to Lead Creepage Distance = 4.8 mm
• P-Channel
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
f = 60 Hz)
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
IRFI9640G, SiHFI9640G
stg
design,
- 55 to + 150
LIMIT
- 200
300
± 20
- 6.1
- 3.9
0.32
- 6.1
- 5.0
- 24
650
4.0
1.1
40
10
low
RMS
d
Vishay Siliconix
(t = 60 s;
on-resistance
www.vishay.com
lbf · in
UNIT
W/°C
N · m
RoHS*
COMPLIANT
V/ns
mJ
mJ
°C
W
V
A
A
Available
and
1

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IRFI9640GPBF Summary of contents

Page 1

... D external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The P-Channel MOSFET FULLPAK is mounted to a heatsink using a single clip single screw fixing. TO-220 FULLPAK IRFI9640GPbF SiHFI9640G-E3 IRFI9640G SiHFI9640G = 25 °C, unless otherwise noted °C ...

Page 2

... IRFI9640G, SiHFI9640G Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91169 S09-0010-Rev. A, 19-Jan- °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C IRFI9640G, SiHFI9640G Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFI9640G, SiHFI9640G Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91169 S09-0010-Rev. A, 19-Jan-09 ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91169 S09-0010-Rev. A, 19-Jan-09 IRFI9640G, SiHFI9640G Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit t d(on Fig. 10b - Switching Time Waveforms Fig. 12b - Unclamped Inductive Waveforms Vishay Siliconix D.U. d(off www.vishay.com 5 ...

Page 6

... IRFI9640G, SiHFI9640G Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Current regulator Same type as D.U.T. 50 kΩ 0.2 µ 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91169 ...

Page 7

... Inductor current * V Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91169. ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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