IRLI640GPBF Vishay, IRLI640GPBF Datasheet - Page 2

MOSFET N-CH 200V 9.9A TO220FP

IRLI640GPBF

Manufacturer Part Number
IRLI640GPBF
Description
MOSFET N-CH 200V 9.9A TO220FP
Manufacturer
Vishay
Datasheets

Specifications of IRLI640GPBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
180 mOhm @ 5.9A, 5V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
9.9A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
66nC @ 10V
Input Capacitance (ciss) @ Vds
1800pF @ 25V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.18 Ohm @ 5 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
9.9 A
Power Dissipation
40000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
9.9A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
180mohm
Rds(on) Test Voltage Vgs
5V
Threshold Voltage Vgs Typ
2V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRLI640GPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLI640GPBF
Manufacturer:
VISHAY
Quantity:
21 500
IRLI640G, SiHLI640G
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
t
t
I
I
C
R
V
C
V
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
L
t
DS
L
SM
I
t
t
on
DS
oss
t
SD
thJA
thJC
iss
rss
S
rr
gd
fs
gs
r
f
D
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
V
T
GS
GS
V
GS
J
DS
T
= 25 °C, I
Intrinsic turn-on time is negligible (turn-on is dominated by L
= 5.0 V
= 4.0 V
J
Reference to 25 °C, I
= 10 V
= 25 °C, I
= 160 V, V
V
V
V
R
V
V
f = 1.0 MHz, see fig. 5
TYP.
TEST CONDITIONS
DS
DS
DD
GS
G
DS
-
-
= 4.6 Ω
= 200 V, V
= V
= 100 V, I
F
= 0 V, I
= 50 V, I
V
V
see fig. 10
V
= 17 A, dI/dt = 100 A/µs
GS
DS
S
GS
GS
I
GS
D
= 9.9 A, V
= ± 10 V
, I
= 25 V,
= 17 A, V
= 0 V,
see fig. 6 and 13
,
= 0 V, T
D
R
D
D
= 250 µA
D
= 250 µA
D
I
I
GS
D
D
= 5.7 Ω,
= 10 A
= 17 A,
b
= 5.9 A
= 5.0 A
D
= 0 V
GS
= 1 mA
J
DS
G
= 160 °C
G
b
= 0 V
= 160 V,
b
b
MAX.
D
S
b
b
D
S
3.1
65
b
MIN.
200
1.0
16
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S09-0039-Rev. A, 19-Jan-09
Document Number: 91314
TYP.
1800
0.27
400
120
310
8.0
4.5
7.5
3.2
83
44
52
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
± 100
MAX.
0.18
0.27
S
250
470
2.0
9.0
9.9
2.0
4.8
25
66
38
40
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
)
V/°C
nA
µA
nC
nH
µC
pF
ns
ns
V
V
Ω
S
A
V

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