IRLL014 Vishay, IRLL014 Datasheet - Page 5

• Manufacturer Part Number: IRLL014
• Description: MOSFET N-CH 60V 2.7A SOT223
• Manufacturer: Vishay

Specifications of IRLL014

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 200 mOhm @ 1.6A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 8.4nC @ 5V
• Input Capacitance (ciss) @ Vds: 400pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLL014

Document Number: 91319
S10-1257-Rev. C, 31-May-10
Fig. 9 - Maximum Drain Current vs. Case Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
10
10
10
10
-1
1
-2
2
10
50
D = 0.50
-5
0.20
0.02
0.10
0.05
0.01
T
C
, Case Temperature (°C)
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
-4
100
Single Pulse
(Thermal Response)
10
-3
125
t
1
150
, Rectangular Pulse Duration (s)
10
-2
0.1
1
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
g
10 V
V
10
GS
t
d(on)
Notes:
1. Duty Factor, D = t
2. Peak T
1
V
DS
IRLL014, SiHLL014
t
r
j
= P
P
DM
DM
10
D.U.T.
2
x Z
Vishay Siliconix
R
t
1
1
thJC
D
/t
t
d(off)
2
t
2
+ T
C
10
t
f
+
3
-
www.vishay.com
V
DD
5