IRF830 Vishay, IRF830 Datasheet - Page 4

• Manufacturer Part Number: IRF830
• Description: MOSFET N-CH 500V 4.5A TO-220AB
• Manufacturer: Vishay

Specifications of IRF830

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 2.7A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 610pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 74 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF830; IRF830IR

IRF830, SiHF830
Vishay Siliconix
www.vishay.com
4
91063_06
91063_05
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage
1500
1250
1000
750
500
250
20
16
12
8
4
0
0
10
0
I
0
D
= 3.1 A
V
DS ,
8
Q
V
G
DS
Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
= 100 V
V
DS
16
V
C
C
C
= 250 V
GS
iss
rss
oss
V
= 0 V, f = 1 MHz
= C
= C
= C
DS
10
24
gs
gd
= 400 V
ds
C
+ C
1
+ C
rss
C
C
gd
gd
oss
For test circuit
see figure 13
iss
, C
32
ds
Shorted
40
91063_08
91063_07
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
0.1
10
-2
1
0
2
5
2
5
2
5
2
5
2
1
Fig. 8 - Maximum Safe Operating Area
0.4
0.1
2
5
V
V
DS
SD
1
Operation in this area limited
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
0.6
2
150
5
T
T
Single Pulse
°
10
C
J
C
by R
= 150 °C
= 25 °C
2
0.8
DS(on)
5
10
S-81290-Rev. A, 16-Jun-08
25
Document Number: 91063
2
°
2
C
5
1.0
1
10
100
10
10
ms
V
ms
µs
GS
3
µs
2
= 0 V
5
10
1.2
4