IRFIB7N50APBF Vishay, IRFIB7N50APBF Datasheet - Page 6

• Manufacturer Part Number: IRFIB7N50APBF
• Description: MOSFET N-CH 500V 6.6A TO220FP
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of IRFIB7N50APBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 520 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 6.6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 52nC @ 10V
• Input Capacitance (ciss) @ Vds: 1423pF @ 25V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.52 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 6.6 A
• Power Dissipation: 60000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 6.6A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 520mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFIB7N50APBF

IRFIB7N50A, SiHFIB7N50A
Vishay Siliconix
www.vishay.com
6
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 12d -Typical Drain-to-Source Voltage vs. Avalanche
600
500
400
300
200
100
660
640
620
600
580
0
0.0
25
Starting T , Junction Temperature ( C)
1.0
I
50
av
2.0
, Avalanche Current (A)
J
75
3.0
Current
4.0
100
TOP
BOTTOM
5.0
125
6.0
°
4.9A
7.0A
I D
11A
7.0
150
A
10 V
V
Fig. 13a - Basic Gate Charge Waveform
12 V
G
V
Fig. 13b - Gate Charge Test Circuit
GS
Q
Same type as D.U.T.
GS
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
Q
Charge
Q
0.3 µF
GD
G
I
G
S09-0517-Rev. B, 13-Apr-09
Document Number: 91176
D.U.T.
I
D
+
-
V
DS