FDI025N06 Fairchild Semiconductor, FDI025N06 Datasheet - Page 7

• Manufacturer Part Number: FDI025N06
• Description: MOSFET N-CH 60V 265A TO-262
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDI025N06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 265A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 226nC @ 10V
• Input Capacitance (ciss) @ Vds: 14885pF @ 25V
• Power - Max: 395W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0025 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 265 A
• Power Dissipation: 395 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Mechanical Dimensions
Dimensions in Millimeters
FDI025N06 Rev. A
www.fairchildsemi.com
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