IRFP23N50LPBF Vishay, IRFP23N50LPBF Datasheet - Page 3

• Manufacturer Part Number: IRFP23N50LPBF
• Description: MOSFET N-CH 500V 23A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP23N50LPBF

• Transistor Polarity: N-Channel
• Continuous Drain Current Id: 23A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 235mohm
• Rds(on) Test Voltage Vgs: 10V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 235 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 3600pF @ 25V
• Power - Max: 370W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.235 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 23 A
• Power Dissipation: 370000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Voltage Vgs Max: 30V
• Operating Temperature: RoHS Compliant
• Leaded Process Compatible: Yes
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFP23N50LPBF

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91209
S11-0445-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.001
100
0.01
100
0.1
0.1
10
10
1
1
0.1
1
TOP
BOTTOM 4.5V
TOP
BOTTOM 4.5V
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
V
DS
VGS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
, Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
1
20µs PULSE WIDTH
Tj = 25 °C
20µs PULSE WIDTH
Tj = 150 °C
10
4,5 V
4.5 V
10
This datasheet is subject to change without notice.
100
100
1000.00
IRFP23N50L, SiHFP23N50L
100.00
10.00
Fig. 4 - Normalized On-Resistance vs. Temperature
1.00
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0
-60
Fig. 3 - Typical Transfer Characteristics
I
D
T
-40
= 23 A
J ,
Junction Temperature
V GS , Gate-to-Source Voltage (V)
-20
0
6.0
20
40
www.vishay.com/doc?91000
20 µs PULSE WIDTH
T
Vishay Siliconix
60
J
= 150°C
80
11.0
T
J
= 150 °C
100
T
J
= 25 °C
V
www.vishay.com
GS
(°C)
120
= 10 V
140
16.0
160
3