SI2302-TP Micro Commercial Components (MCC), SI2302-TP Datasheet - Page 2

• Manufacturer Part Number: SI2302-TP
• Description: MOSFET N-CH 20V 3A SOT-23
• Manufacturer: Micro Commercial Components (MCC)

Specifications of SI2302-TP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 72 mOhm @ 3.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.2V @ 50µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 237pF @ 10V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: SOT-23
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 110 mOhms
• Forward Transconductance Gfs (max / Min): 8.5 S
• Drain-source Breakdown Voltage: 20 V
• Continuous Drain Current: 3 A
• Power Dissipation: 1.25 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI2302-TPMSTR

Revision: A
Micro Commercial Components
Electrical Characteristics
M C C
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forwand Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-On Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Parameter
www.mccsemi.com
c
d
d
TM
b
c
T
A
= 25 C unless otherwise noted
R
Symbol
V
BV
t
t
V
C
C
Q
I
GS(th)
DS(on)
C
d(on)
d(off)
Q
I
g
I
Q
GSSF
GSSR
I
DSS
t
t
SD
iss
oss
FS
rss
gd
S
r
f
gs
g
DSS
2 of 5
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
GS
DS
GS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
Test Condition
= 20V, V
= 5V, I
= 10V, V
= 10V, I
= 0V, I
= 8V, V
= -8V, V
= V
= 4.5V, I
= 2.5V, I
= 10V, I
= 4.5V, R
= 4.5V
= 0V, I
DS
, I
D
D
S
D
D
D
DS
DS
= 10 µ A
D
D
= 3.6A
= 0.94A
GS
GS
GEN
= 3.6A,
= 50 µ A
= 3.6A,
= 3.6A
= 3.1A
= 0V
= 0V
= 0V
= 0V,
= 6Ω
0.65
Min
20
SI2302
Typ
237
120
8.5
1.4
1.8
55
82
45
23
11
34
36
6
Max
-100
0.94
110
100
1.2
1.2
72
45
30
70
70
10
1
Units
mΩ
mΩ
nC
nC
nC
µ A
nA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
S
A
V
2011/01/01