2N7002 STMicroelectronics, 2N7002 Datasheet - Page 3

• Manufacturer Part Number: 2N7002
• Description: MOSFET N-CH 60V 200MA SOT-23-3
• Manufacturer: STMicroelectronics
• Series: STripFET™r
• Type: Power MOSFETr

Specifications of 2N7002

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 200mA
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 2nC @ 5V
• Input Capacitance (ciss) @ Vds: 43pF @ 25V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.6 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 18 V
• Continuous Drain Current: 0.2 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Current, Drain: 0.2 A
• Gate Charge, Total: 1.4 nC
• Package Type: SOT-23-3L
• Polarization: N-Channel
• Resistance, Drain To Source On: 1.8 Ohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 7 ns
• Time, Turn-on Delay: 5 ns
• Transconductance, Forward: 0.6 S
• Voltage, Breakdown, Drain To Source: 60 V
• Voltage, Forward, Diode: 1.2 V
• Voltage, Gate To Source: ±18 V
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 5Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±18V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3111-2

2N7000, 2N7002
1
Electrical ratings
Table 2.
1. Pulse width limited by safe operating area
Table 3.
1.
Rthj-amb
Symbol
Symbol
I
V
DM
P
When mounted on 1inch² FR-4, 2 Oz copper board.
V
V
T
DGR
T
I
TOT
GS
stg
DS
D
J
(1)
Thermal resistance junction-ambient max
Operating junction temperature
Storage temperature
Drain-source voltage (V
Drain-gate voltage (R
Gate- source voltage
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Absolute maximum ratings
Thermal data
C
GS
Parameter
Parameter
= 25 °C
GS
= 20 kΩ)
= 0)
C
= 25 °C
TO-92
TO-92
0.35
1.4
125
1
- 55 to 150
Value
Value
± 18
60
60
Electrical ratings
SOT23-3L
SOT23-3L
357.1
0.20
0.35
1
(1)
°C/W
Unit
Unit
°C
W
V
A
A
3/14
V
V