IRLML6302TRPBF International Rectifier, IRLML6302TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRLML6302TRPBF
• Description: MOSFET P-CH 20V 780MA SOT-23
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLML6302TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 600 mOhm @ 610mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 780mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 3.6nC @ 4.45V
• Input Capacitance (ciss) @ Vds: 97pF @ 15V
• Power - Max: 540mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Channel Type: P
• Current, Drain: –0.8 A
• Gate Charge, Total: 2.4 nC
• Package Type: MICRO-3
• Polarization: P-Channel
• Power Dissipation: 0.5 W
• Resistance, Drain To Source On: 0.6 Ohm
• Resistance, Thermal, Junction To Case: 230 °C/W
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 22 ns
• Time, Turn-on Delay: 13 ns
• Transconductance, Forward: 0.56 S
• Voltage, Breakdown, Drain To Source: -20 V
• Voltage, Drain To Source: –20 V
• Voltage, Forward, Diode: -1.2 V
• Voltage, Gate To Source: ±12 V
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 600 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 0.62 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 2.4 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLML6302PBFTR

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Re-Applied
Voltage
Reverse
Recovery
Current

‚
+
-
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
ƒ
•
•
•
Diode Recovery
Current
dv/dt
Forward Drop
•
•
•
di/dt
D =
-
Period
„
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
6