IRFL4310TRPBF International Rectifier, IRFL4310TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRFL4310TRPBF
• Description: MOSFET N-CH 100V 1.6A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFL4310TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 200 mOhm @ 1.6A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 330pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Current, Drain: 1.6 A
• Gate Charge, Total: 17 nC
• Package Type: SOT-223
• Polarization: N-Channel
• Power Dissipation: 1 W
• Resistance, Drain To Source On: 0.2 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 34 ns
• Time, Turn-on Delay: 7.8 ns
• Transconductance, Forward: 1.5 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 1.6 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 17 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFL4310TRPBF; IRFL4310TRPBFTR

IRFL4310PbF
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