IRF8707TRPBF International Rectifier, IRF8707TRPBF Datasheet

MOSFET N-CH 30V 11A 8-SOIC

IRF8707TRPBF

Manufacturer Part Number
IRF8707TRPBF
Description
MOSFET N-CH 30V 11A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF8707TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11.9 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
2.35V @ 25µA
Gate Charge (qg) @ Vgs
9.3nC @ 4.5V
Input Capacitance (ciss) @ Vds
760pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
17.5 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
11 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
6.2 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF8707TRPBFTR

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Applications
l
l
Benefits
l
l
l
l
l
l
l
Notes  through
The IRF8707PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package. The IRF8707PbF has been optimized for parameters that are
critical in synchronous buck
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for notebook and Netcom applications.
www.irf.com
Description
V
V
I
I
I
P
P
T
T
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
J
STG
DS
GS
D
D
θJL
θJA
@ T
@ T
Systems
Control MOSFET of Sync-Buck
Very Low Gate Charge
Very Low R
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
and Current
20V V
100% tested for Rg
Lead-Free
Converters used for Notebook
Processor Power
Control MOSFET for Isolated
@T
@T
DC-DC Converters in Networking
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
GS
Max. Gate Rating
DS(on)
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
are on page 9
at 4.5V V
GS
operation
Parameter
Parameter
fg
g
including Rds(on) and gate charge to reduce both conduction
GS
GS
@ 10V
@ 10V
V
30V
DSS
G
S
S
S
11.9m @V
1
2
3
4
Top View
Typ.
–––
–––
R
DS(on)
-55 to + 150
HEXFET
8
6
5
7
IRF8707PbF
Max.
0.02
± 20
9.1
2.5
1.6
30
11
88
D
D
D
A
D
A
max
GS
Max.
®
= 10V 6.2nC
20
50
Power MOSFET
SO-8
Units
Units
Qg
W/°C
°C/W
10/24/07
°C
W
V
A
1

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IRF8707TRPBF Summary of contents

Page 1

Applications Control MOSFET of Sync-Buck l Converters used for Notebook Processor Power Control MOSFET for Isolated l DC-DC Converters in Networking Systems Benefits Very Low Gate Charge l Very Low DS(on) GS Ultra-Low Gate Impedance ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V Gate Threshold Voltage Coefficient GS(th) I ...

Page 3

PULSE WIDTH 0 25°C 2.3V 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 150° 25° ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 1000 C iss C oss C ...

Page 5

Ambient Temperature (°C) Fig 9. Maximum Drain Current vs. Ambient Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 0 ...

Page 6

125° 25° GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage 15V DRIVER ...

Page 7

D.U.T + ƒ • • - • + ‚ -  R • • • SD • Fig 17 D.U. ≤ 1 ≤ 0.1 % Fig 18a. Switching Time Test Circuit www.irf.com Driver Gate Drive ...

Page 8

SO-8 Package Outline Dimensions are shown in milimeters (inches & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PIAPSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9Ã ...

Page 9

SO-8 Tape and Reel Dimensions are shown in milimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS ...

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