STN3NF06 STMicroelectronics, STN3NF06 Datasheet - Page 7

• Manufacturer Part Number: STN3NF06
• Description: MOSFET N-CH 60V 4A SOT-223
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STN3NF06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 315pF @ 25V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.07 Ohms
• Forward Transconductance Gfs (max / Min): 3 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4 A
• Power Dissipation: 3.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4764-2

STN3NF06
Figure 7.
Figure 9.
Figure 11. Source-drain diode forward
Gate charge vs. gate-source voltage Figure 8.
Normalized gate threshold voltage
vs. temperature
characteristics
Figure 10. Normalized on resistance vs.
Figure 12. Normalized breakdown voltage vs.
Capacitance variations
temperature
temperature
Electrical characteristics
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