IRF7663TRPBF International Rectifier, IRF7663TRPBF Datasheet

IRF7663TRPBF

Manufacturer Part Number

IRF7663TRPBF

Description

MOSFET P-CH 20V 8.2A MICRO8

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF7663TRPBF.pdf (7 pages)

Specifications of IRF7663TRPBF

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

20 mOhm @ 7A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

8.2A

Vgs(th) (max) @ Id

1.2V @ 250µA

Gate Charge (qg) @ Vgs

45nC @ 5V

Input Capacitance (ciss) @ Vds

2520pF @ 10V

Power - Max

1.8W

Mounting Type

Surface Mount

Package / Case

Micro8™

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

20 mOhms

Drain-source Breakdown Voltage

- 20 V

Gate-source Breakdown Voltage

12 V

Continuous Drain Current

- 8.2 A

Power Dissipation

1.8 W

Gate Charge Qg

30 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF7663TRPBF
IRF7663TRPBFTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF7663TRPBF

Manufacturer:

INFINEON

Quantity:

3 001

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Thermal Resistance

Description

New trench HEXFET

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design that HEXFET

Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a wide

variety of applications.

The new Micro8™ package has half the footprint area of the

standard SO-8. This makes the Micro8 an ideal package for

applications where printed circuit board space is at a premium.

The low profile (<1.1mm) of the Micro8 will allow it to fit easily

into extremely thin application environments such as portable

electronics and PCMCIA cards.

www.irf.com

θJA

Lead-Free

Available in Tape & Reel

@ T

Trench Technology

Ultra Low On-Resistance

P-Channel MOSFET

Very Small SOIC Package

Low Profile (<1.1mm)

STG

= 70°C

= 25°C

= 70°C

Drain- Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Single Pulse Avalanche Energy„

Gate-to-Source Voltage

Junction and Storage Temperature Range

Maximum Junction-to-Ambient

power MOSFETs from International

Parameter

@ -4.5V

Top View

HEXFET

IRF7663PbF

-55 to + 150

Max.

1.15

-8.2

-6.6

115

± 12

-20

-66

1.8

DS(on)

™

Power MOSFET

DSS

= 0.020Ω

= -20V

PD-95634

mW/°C

Units

°C/W

°C

8/11/04

Related parts for IRF7663TRPBF

IRF7663TRPBF Summary of contents

Page 1

Trench Technology l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Lead-Free l Description ® New trench HEXFET power MOSFETs from International Rectifier utilize advanced processing ...

Page 2

IRF7663PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

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IRF7663TRPBF International Rectifier, IRF7663TRPBF Datasheet

IRF7663TRPBF

Specifications of IRF7663TRPBF

Available stocks

Related parts for IRF7663TRPBF

IRF7663TRPBF Summary of contents

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