STN3NF06L STMicroelectronics, STN3NF06L Datasheet - Page 4

• Manufacturer Part Number: STN3NF06L
• Description: MOSFET N-CH 60V 4A SOT223
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STN3NF06L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 2.8V @ 250µA
• Gate Charge (qg) @ Vgs: 9nC @ 5V
• Input Capacitance (ciss) @ Vds: 340pF @ 25V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 3 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 4 A
• Power Dissipation: 3300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3177-2

Electrical characteristics
2
4/12
Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 6.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
g
C
t
t
I
I
C
DS(on)
C
Q
Q
GS(th)
d(on)
d(off)
GSS
fs
DSS
Q
oss
t
rss
t
iss
gd
gs
r
f
g
(1)
= 25 °C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
rise time
Turn-off delay time
fall time
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
DS
= 0)
Parameter
Parameter
Parameter
GS
= 0)
V
R
(see Figure 14)
V
R
(see Figure 14)
V
V
V
V
(see Figure 15)
I
V
V
V
V
V
V
DD
DD
D
GS
G
G
DS
DS
DD
GS
GS
GS
DS
DS
DS
=4.7 Ω, V
=4.7 Ω, V
= 250 µA, V
=30 V, I
=30 V, I
= 15 V, I
=48 V, I
=25 V, f=1 MHz, V
=5 V
= V
= 10 V, I
= 5 V, I
= Max rating,
= Max rating @125 °C
= ±16 V
Test conditions
Test conditions
Test conditions
GS
, I
D
D
D
D
D
D
=1.5 A,
GS
=1.5 A,
GS
D
= 1.5 A
=1.5 A
= 3 A
= 1.5 A
= 250 µA
GS
=5 V
=5 V
= 0
GS
=0
Min.
60
Min.
Min.
1
0.085
Typ.
0.07
Typ.
Typ.
340
1.5
2.8
63
30
25
20
10
3
7
9
STN3NF06L
±
Max.
Max.
Max.
0.10
0.12
2.8
10
100
9
1
Unit
Unit
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
µA
µA
nA
S
V
V
Ω
Ω