IRLL3303TRPBF International Rectifier, IRLL3303TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRLL3303TRPBF
• Description: MOSFET N-CH 30V 4.6A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLL3303TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 31 mOhm @ 4.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 840pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 45 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 4.6 A
• Power Dissipation: 2.1 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 34 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLL3303PBFTR

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1 0 0 0
0 . 0 1
1 0 0
0.1
1 0
0 . 0 0 0 0 1
Fig 9a. Basic Gate Charge Waveform
Fig 9b. Gate Charge Test Circuit
1
10V
12V
V
V
D = 0 .5 0
GS
G
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Same Type as D.U.T.
0 .0 5
0 .2 0
0 .1 0
0 .02
0 .01
Current Regulator
.2µF
Q
GS
(T H E R M A L R E S P O N S E )
0 . 0 0 0 1
S IN G L E P U L S E
50KΩ
3mA
Current Sampling Resistors
.3µF
Q
Charge
I
Q
G
GD
G
0 . 0 0 1
D.U.T.
I
D
+
-
V
t , R e cta n g u la r P u lse D u ra tio n (se c )
DS
1
0 . 0 1
0.1
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
90%
10%
V
1
DS
GS
R
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
G
10V
V
t
d(on)
GS
N o te s :
1 . D u ty fac t or D = t
2 . P e a k T = P
1 0
V
DS
t
r
IRLL3303PbF
J
D M
1 0 0
D.U.T.
x Z
1
/ t
R
th J A
D
2
P
t
d(off)
D M
+ T
A
1 0 0 0
t
1
t
f
t 2
+
-
V
DD
1 0 0 0 0
5
A