STD12NF06T4 STMicroelectronics, STD12NF06T4 Datasheet - Page 7
![MOSFET N-CH 60V 12A DPAK](/photos/5/30/53090/497-dpak_to-252_sml.jpg)
STD12NF06T4
Manufacturer Part Number
STD12NF06T4
Description
MOSFET N-CH 60V 12A DPAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Type
Power MOSFETr
Datasheet
1.STD12NF06T4.pdf
(14 pages)
Specifications of STD12NF06T4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
315pF @ 25V
Power - Max
30W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohms
Forward Transconductance Gfs (max / Min)
5 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
12 A
Power Dissipation
30 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.1Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3154-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD12NF06T4
Manufacturer:
ST
Quantity:
20 000
STD12NF06, STD12NF06T4
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Source-drain diode forward
Gate charge vs. gate-source
voltage
vs. temperature
characteristics
Doc ID 8431 Rev 7
Figure 9.
Figure 11. Normalized on resistance vs.
Figure 13. Normalized breakdown voltage vs.
Capacitance variations
temperature
temperature
Electrical characteristics
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