IRF7421D1TRPBF International Rectifier, IRF7421D1TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7421D1TRPBF
• Description: MOSFET N-CH 30V 5.8A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7421D1TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 35 mOhm @ 4.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 510pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 60 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.8 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 18 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7421D1PBFTR; IRF7421D1TRPBF; IRF7421D1TRPBFTR

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100
0.1
1000
10
0.0001
800
600
400
200
1
0
D = 0.50
1
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
C
C
C
V
iss
oss
rss
DS
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
(THERMAL RESPONSE)
0.001
= 0V,
= C
= C
= C
SINGLE PULSE
gs
gd
ds
+ C
+ C
10
gd
gd
f = 1MHz
, C
Power Mosfet Characteristics
ds
0.01
t , Rectangular Pulse Duration (sec)
SHORTED
1
100
A
0.1
20
16
12
8
4
0
0
I
D
= 4.1A
1. Duty factor D = t / t
2. Peak T = P
Notes:
1
5
Q , Total Gate Charge (nC)
G
IRF7421D1PbF
J
10
DM
V
V
DS
DS
x Z
1
= 24V
= 15V
15
thJA
P
2
10
DM
FOR TEST CIRCUIT
+ T
SEE FIGURE 9
A
t
20
1
t
2
25
100
5
30
A