IRF7322D1TRPBF International Rectifier, IRF7322D1TRPBF Datasheet

IRF7322D1TRPBF

Manufacturer Part Number

IRF7322D1TRPBF

Description

MOSFET P-CH 20V 5.3A 8-SOIC

Manufacturer

International Rectifier

Series

FETKY™r

Datasheet

1.IRF7322D1TRPBF.pdf (8 pages)

Specifications of IRF7322D1TRPBF

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Diode (Isolated)

Rds On (max) @ Id, Vgs

62 mOhm @ 2.9A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

5.3A

Vgs(th) (max) @ Id

700mV @ 250µA

Gate Charge (qg) @ Vgs

29nC @ 4.5V

Input Capacitance (ciss) @ Vds

780pF @ 15V

Power - Max

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

62 mOhms

Drain-source Breakdown Voltage

- 20 V

Gate-source Breakdown Voltage

12 V

Continuous Drain Current

- 5.3 A

Power Dissipation

2 W

Mounting Style

SMD/SMT

Gate Charge Qg

19 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF7322D1PBFTR
IRF7322D1TRPBF
IRF7322D1TRPBFTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF7322D1TRPBF

Manufacturer:

GOODSKY

Quantity:

3 000

Company:

H&T Electronics

Part Number:

IRF7322D1TRPBF

Quantity:

8 421

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Description

Absolute Maximum Ratings (T

Thermal Resistance Ratings

Notes:

www.irf.com

The FETKY family of co-packaged MOSFETs and Schottky diodes offers the

designer an innovative, board space saving solution for switching regulator

and power management applications. Generation 5 HEXFET Power

MOSFETs utilize advanced processing techniques to achieve extremely low

on-resistance per silicon area. Combinining this technology with

International Rectifier's low forward drop Schottky rectifiers results in an

extremely efficient device suitable for use in a wide variety of portable

electronics applications.

The SO-8 has been modified through a customized leadframe for

enhanced thermal characteristics. The SO-8 package is designed for vapor

phase, infrared or wave soldering techniques.

Parameter

dv/dt

θJA

Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)

Pulse width ≤ 300µs; duty cycle ≤ 2%

Surface mounted on FR-4 board, t ≤ 10sec

Lead-Free

Co-packaged HEXFET

and Schottky Diode

Ideal For Buck Regulator Applications

P-Channel HEXFET

Low V

Generation 5 Technology

SO-8 Footprint

@ T

STG

≤ -2.9A, di/dt ≤ -77A/µs, V

= 25°C

= 70°C

= 25°C

= 70°C

Schottky Rectifier

Continuous Drain Current, V

Pulsed Drain Current À

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt Á

Junction and Storage Temperature Range

Junction-to-Ambient

≤ V

Power MOSFET

(BR)DSS

, T

= 25°C unless otherwise noted)

≤ 150°C

@ -4.5V

FETKY

Top View

IRF7322D1PbF

MOSFET / Schottky Diode

-55 to +150

Maximum

± 12

Maximum

-5.3

-4.3

-5.0

-43

2.0

1.3

62.5

Schottky Vf = 0.39V

DS(on)

DSS

SO-8

PD - 95298

= 0.058Ω

= -20V

Units

mW/°C

°C/W

Units

V/ns

°C

10/12/04

Related parts for IRF7322D1TRPBF

IRF7322D1TRPBF Summary of contents

Page 1

... Generation 5 HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. ...

Page 2

IRF7322D1PbF MOSFET Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Q ...

Page 3

VGS TOP -7.50V -4.50V -4.00V -3.50V -3.00V -2.70V -2.00V BOTTOM -1.50V 10 1 0.1 0 Drain-to-Source Voltage (V) DS 100 ° 1.5 2.0 2.5 3 Gate-to-Source Voltage ...

Page 4

IRF7322D1PbF 1400 1MHz iss 1200 rss oss ds gd 1000 C iss 800 C oss 600 400 C ...

Page 5

SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 0.8 0 0.4 0.2 0 Drain Current (A) ...

Page 6

IRF7322D1PbF Schottky Diode Characteristics 10 1 0.1 0.0 0.2 0.4 0.6 Forward Voltage Drop - V Forward Voltage Drop - 150° 125°C J ...

Page 7

SO-8 (Fetky) Package Outline 0.25 [.010 NOTES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONTROLLING DIMENS ION: MILLIME ...

Page 8

IRF7322D1PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE ...

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