IRLR3410TRPBF International Rectifier, IRLR3410TRPBF Datasheet - Page 7

• Manufacturer Part Number: IRLR3410TRPBF
• Description: MOSFET N-CH 100V 17A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRLR3410TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 105 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 5V
• Input Capacitance (ciss) @ Vds: 800pF @ 25V
• Power - Max: 79W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.105Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±16V
• Continuous Drain Current: 17A
• Power Dissipation: 79W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 155 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 16 V
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 26 ns
• Gate Charge Qg: 22.7 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 53 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLR3410PBFTR

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Re-Applied
Voltage
Reverse
Recovery
Current

‚
+
-
R
D.U.T
G
*
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
GS
P.W.
= 5V for Logic Level Devices
SD
DS
Waveform
Waveform
Fig 14. For N-Channel HEXFETS
Peak Diode Recovery dv/dt Test Circuit
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
ƒ
• dv/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - Device Under Test
Diode Recovery
SD
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
di/dt
Current Transformer
D =
-
G
Period
„
P.W.
+
V
V
I
SD
IRLR/U3410PbF
GS
DD
=10V
+
-
V
DD
7