IRF7413PBF International Rectifier, IRF7413PBF Datasheet - Page 5

• Manufacturer Part Number: IRF7413PBF
• Description: MOSFET N-CH 30V 13A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7413PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 7.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 79nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.011Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 13A
• Power Dissipation: 2.5W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100
0.1
10
0.0001
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
V
12V
G
V
GS
Same Type as D.U.T.
Q
Current Regulator
GS
.2µF
(THERMAL RESPONSE)
0.001
50KΩ
3mA
SINGLE PULSE
Current Sampling Resistors
.3µF
Charge
Q
Q
GD
I
G
G
D.U.T.
I
D
0.01
t , Rectangular Pulse Duration (sec)
1
+
-
V
DS
0.1
V
90%
10%
V
DS
GS
1. Duty factor D = t / t
2. Peak T = P
Notes:
1
t
d(on)
J
≤ 0.1 %
≤ 1
t
r
DM
x Z
1
thJA
P
2
10
DM
+ T
A
t
t
1
d(off)
t
2
t
f
+
-
100
5