IRFH3707TR2PBF International Rectifier, IRFH3707TR2PBF Datasheet - Page 6

• Manufacturer Part Number: IRFH3707TR2PBF
• Description: MOSFET N-CH 30V 12A PQFN33
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH3707TR2PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12.4 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 8.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 755pF @ 15V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, 8-PowerQFN
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 9.4mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: PQFN
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 17.9 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 29 A
• Power Dissipation: 2.8 W
• Gate Charge Qg: 5.4 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH3707TR2PBFTR

Fig 14a. Unclamped Inductive Test Circuit
Fig 14b. Unclamped Inductive Waveforms
6
35
30
25
20
15
10
I
Fig 12. On-Resistance vs. Gate Voltage
AS
5
2
R G
20V
V DS
4
V GS, Gate -to -Source Voltage (V)
t p
6
I AS
t p
D.U.T
8
0.01 Ω
L
10
12
V
T J = 25°C
T J = 125°C
(BR)DSS
15V
14
DRIVER
I D = 12A
16
+
-
V DD
18
A
20
90%
V
10%
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
60
50
40
30
20
10
V
DS
0
GS
25
Fig 13. Maximum Avalanche Energy
Starting T J , Junction Temperature (°C)
t
d(on)
50
≤ 0.1
≤ 1
t
r
vs. Drain Current
75
t
d(off)
100
TOP
BOTTOM 9.40A
www.irf.com
t
f
125
I D
+
-
2.95A
3.63A
150