IRF7606TR International Rectifier, IRF7606TR Datasheet - Page 4
![MOSFET P-CH 30V 3.6A MICRO8](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7606TR
Manufacturer Part Number
IRF7606TR
Description
MOSFET P-CH 30V 3.6A MICRO8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7606TR.pdf
(8 pages)
Specifications of IRF7606TR
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
90 mOhm @ 2.4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3.6A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
520pF @ 25V
Power - Max
1.8W
Mounting Type
Surface Mount
Package / Case
Micro8™
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7606TRPBF
Manufacturer:
International Rectifier
Quantity:
46 641
Part Number:
IRF7606TRPBF
Manufacturer:
IR
Quantity:
20 000
4
2.0
1.5
1.0
0.5
0.0
-60
Fig 5. Normalized On-Resistance
I
D
-40
= -2.7A
T , Junction Temperature (°C)
-20
J
Vs. Temperature
0
20
0.14
0.12
0.10
0.08
0.06
0.04
40
2
Fig 7. Typical On-Resistance Vs. Gate
60
80
-V
/5
100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
6
= -10V
Voltage
A
10
I = -3.6A
Fig 6. Typical On-Resistance Vs. Drain
0.3
0.2
0.1
0.0
0
14
2
A
-I
,
4
Current
, Drain Current (A)
VGS = -10V
6
VGS = -4.5V
www.irf.com
8
10
12
A