IRFR5410TRPBF International Rectifier, IRFR5410TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRFR5410TRPBF
• Description: MOSFET P-CH 100V 13A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR5410TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 205 mOhm @ 7.8A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 58nC @ 10V
• Input Capacitance (ciss) @ Vds: 760pF @ 25V
• Power - Max: 66W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 205 m Ohms
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 13 A
• Power Dissipation: 66 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 46 ns
• Gate Charge Qg: 38.7 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 58 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFR5410PBFTR; IRFR5410TRPBF; IRFR5410TRPBFTR

www.irf.com
15
12
9
6
3
0
0.01
25
0.1
10
0.00001
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
C
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
125
°
t , Rectangular Pulse Duration (sec)
1
0.001
150
V
10%
90%
V
GS
DS
0.01
1. Duty factor D = t / t
2. Peak T = P
t
d(on)
Notes:
≤ 0.1 %
≤ 1
t
r
J
DM
x Z
1
0.1
thJC
P
2
DM
+ T
t
d(off)
C
t
1
t
2
t
f
+
-
1
5