STS12NH3LL STMicroelectronics, STS12NH3LL Datasheet - Page 4

• Manufacturer Part Number: STS12NH3LL
• Description: MOSFET N-CH 30V 12A 8-SOIC
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STS12NH3LL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10.5 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 965pF @ 25V
• Power - Max: 2.7W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4122-2

Electrical characteristics
2
4/13
Electrical characteristics
(T
Table 4.
Table 5.
V
Symbol
Symbol
R
CASE
V
(BR)DSS
Q
Q
C
I
I
C
DS(on)
C
Q
GS(th)
Q
R
DSS
GSS
Q
g
oss
gs1
gs2
iss
rss
fs
gs
gd
G
g
=25°C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Pre V
charge
Post V
charge
Gate Input Resistance
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
th
th
gate-to-source
Parameter
gate-to-source
Parameter
GS
= 0)
V
V
V
V
V
(see Figure 20)
V
V
(see Figure 20)
f=1 MHz Gate DC Bias = 0
Test signal level = 20 mV
open drain
I
V
V
V
V
V
V
D
GS
GS
GS
DS
DS
DD
DD
GS
GS
GS
DS
DS
DS
= 250 µA, V
=0
=15 V, I
=15 V, I
= V
= 10 V, I
= 4.5 V, I
=10 V, I
=25 V, f=1 MHz,
=4.5 V
=4.5 V
= Max rating,
= Max rating @125 °C
= ±16 V
Test conditions
Test conditions
GS
, I
D
D
D
D
D
D
= 12 A
= 12 A
= 6 A
= 12 A
= 250 µA
= 6 A
GS
= 0
Min.
Min.
0.5
30
1
0.008
0.010
Typ.
965
285
Typ.
3.7
2.5
1.2
1.5
38
38
9
3
STS12NH3LL
0.0105
Max.
0.013
Max.
2.5
±
12
100
10
1
Unit
Unit
pF
pF
pF
nC
nC
nC
nC
nC
S
Ω
µA
µA
nA
V
V
Ω
Ω