STL8NH3LL STMicroelectronics, STL8NH3LL Datasheet - Page 5

• Manufacturer Part Number: STL8NH3LL
• Description: MOSFET N-CH 30V 8A PWRFLAT3.3SQ
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STL8NH3LL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 965pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: PowerFlat™ (3.3 x 3.3)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4115-2

STL8NH3LL
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration= 300 µs, duty cycle 1.5 %
Symbol
I
V
SDM
I
RRM
I
SD
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
Doc ID 10681 Rev 8
I
I
di/dt = 100 A/µs,
V
(see Figure 16)
SD
SD
DD
= 8 A, V
=8 A,
Test conditions
=20 V, Tj=150 °C
GS
= 0
Electrical characteristics
Min
-
-
-
-
Typ.
17.4
1.45
24
Max
1.3
32
8
Unit
nC
ns
A
A
V
A
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