STS9NF30L STMicroelectronics, STS9NF30L Datasheet

MOSFET N-CH 30V 9A 8-SOIC

STS9NF30L

Manufacturer Part Number
STS9NF30L
Description
MOSFET N-CH 30V 9A 8-SOIC
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STS9NF30L

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
12.5nC @ 4.5V
Input Capacitance (ciss) @ Vds
730pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.015 Ohms
Forward Transconductance Gfs (max / Min)
13 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 18 V
Continuous Drain Current
9 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3234-2

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DESCRIPTION
This application specific Power MOSFET is the second
generation of STMicroelectronis unique "Single Feature
Size™" strip-based process. The resulting transistor
shows the best trade-off between on-resistance and gate
charge. When used as high and low side in buck
regulators, it gives the best performance in terms of both
conduction and switching losses. This is extremely
important for motherboards where fast switching and
high efficiency are of paramount importance.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(
December 2002
.
STS9NF30L
TYPICAL R
TYPICAL Qg = 9.5 nC @ 4.5 V
OPTIMAL R
CONDUCTION LOSSES REDUCED
SWITCHING LOSSES REDUCED
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS FOR MOBILE PC
Pulse width limited by safe operating area.
Symbol
I
V
DM
V
V
P
DGR
I
I
GS
DS
TYPE
D
D
tot
(
LOW GATE CHARGE STripFET™ II POWER MOSFET
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
DS
DS
(on) = 0.020
(on) x Qg TRADE-OFF
V
30 V
DSS
Parameter
<0.020
R
DS(on)
@ 5 V
C
GS
= 25°C
GS
= 20 k )
S
= 0)
C
C
N-CHANNEL 30V - 0.015
= 25°C
= 100°C
9 A
I
D
INTERNAL SCHEMATIC DIAGRAM
Value
± 18
5.7
2.5
30
30
36
9
SO-8
STS9NF30L
- 9A SO-8
Unit
W
V
V
V
A
A
A
1/8

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STS9NF30L Summary of contents

Page 1

... Drain Current (continuous Drain Current (continuous Drain Current (pulsed Total Dissipation at T tot ( Pulse width limited by safe operating area. December 2002 . N-CHANNEL 30V - 0.015 R I DS(on INTERNAL SCHEMATIC DIAGRAM 25° 100° 25°C C STS9NF30L - 9A SO-8 SO-8 Value Unit ± 5 2.5 W 1/8 ...

Page 2

... STS9NF30L THERMAL DATA Rthj-amb (*) Thermal Resistance Junction-ambient T Maximum Operating Junction Temperature j T Storage Temperature stg (*) When mounted on FR-4 board with 0.5 in ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter Drain-source V (BR)DSS Breakdown Voltage Zero Gate Voltage I DSS Drain Current (V GS Gate-body Leakage I GSS Current (V ...

Page 3

... Load, Figure 4 (see test circuit, Figure 2) Test Conditions = (Resistive Load, Figure 3) Test Conditions di/dt = 100A/µ 150° (see test circuit, Figure 3) Thermal Impedance STS9NF30L Min. Typ. Max. Unit 9.5 12 Min. Typ. Max. Unit Min. Typ. Max. Unit 1 1.6 A 3/8 ...

Page 4

... STS9NF30L Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

... Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics . Thermal Impedance Normalized Breakdown Voltage Temperature . STS9NF30L . 5/8 ...

Page 6

... STS9NF30L Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 3: Test Circuit For Diode Recovery Behaviour 6/8 Fig. 2: Gate Charge test Circuit ...

Page 7

... STS9NF30L inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 0.196 0.244 0.050 0.150 0.157 0.050 0.023 0016023 7/8 ...

Page 8

... STS9NF30L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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