STD45NF75T4 STMicroelectronics, STD45NF75T4 Datasheet - Page 9

• Manufacturer Part Number: STD45NF75T4
• Description: MOSFET N-CH 75V 40A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD45NF75T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 24 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 1760pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.024 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 50 S
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 20A
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 18mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4334-2

STD45NF75
Figure 18. Allowable Iav vs. time in avalanche
The previous curve gives the safe operating area for unclamped inductive loads, single
pulse or repetitive, under the following conditions:
P
E
Where:
I
P
t
To de rate above 25 °C, at fixed I
I
Where:
Z
equal to T
AV
AV
AV
th
D(AVE)
AS(AR)
D(AVE)
is the allowable current in avalanche
is the time in avalanche
= 2 * (T
= K * R
= 0.5 * (1.3 * B
is the average power dissipation in avalanche (single pulse)
= P
AV
th
jmax
D(AVE)
.
is the value coming from normalized thermal response at fixed pulse width
- T
CASE
* t
AV
VDSS
)/ (1.3 * B
* I
AV
Doc ID 9902 Rev 5
AV
VDSS
)
, the following equation must be applied:
* Z
th
)
Electrical characteristics
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