IRF7452QTRPBF International Rectifier, IRF7452QTRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF7452QTRPBF
• Description: MOSFET N-CH 100V 4.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7452QTRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 2.7A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 930pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7452QTRPBFTR

IRF7452QPbF
I
AS
12V
Fig 14a&b. Unclamped Inductive Test circuit
6
V
Fig 13a&b. Basic Gate Charge Test Circuit
GS
0.06
0.05
0.04
Same Type as D.U.T.
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
.2µF
50KΩ
3mA
t p
0
Current Sampling Resistors
.3µF
I
G
V GS = 10V
V
(BR)DSS
D.U.T.
4
I
D
and Waveforms
and Waveform
I D , Drain Current (A)
+
-
V
DS
8
V
R G
GS
V GS = 15V
20V
V DS
t p
V
12
G
Q
I AS
GS
D.U.T
0.01 Ω
L
16
Charge
Q
Q
GD
G
15V
20
DRIVER
+
-
V DD
A
0.08
0.07
0.06
0.05
0.04
Fig 13. On-Resistance Vs. Gate Voltage
500
400
300
200
100
0
Fig 14c. Maximum Avalanche Energy
7.0
25
Starting T , Junction Temperature ( C)
8.0
V GS, Gate -to -Source Voltage (V)
50
9.0
Vs. Drain Current
J
10.0
75
11.0
I D = 2.7A
100
12.0
www.irf.com
TOP
BOTTOM
13.0
125
14.0
°
2.0A
3.6A
4.5A
I D
15.0
150