STD70N10F4 STMicroelectronics, STD70N10F4 Datasheet - Page 8

• Manufacturer Part Number: STD70N10F4
• Description: MOSFET N-CH 100V 60A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD70N10F4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 19.5 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 85nC @ 10V
• Input Capacitance (ciss) @ Vds: 5800pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0195 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 60A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 0.015ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8806-2; STD70N10F4

Electrical characteristics
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Figure 14. Source-drain diode forward
(V)
V
0.8
0.7
0.6
0.9
0.5
0.4
SD
0
T
characteristics
J
=-55°C
5
10
15
20
T
T
J
J
=175°C
=25°C
25
30
Doc ID 15207 Rev 3
I
AM03175v1
SD
(A)
STB/D/P/W70N10F4