STS14N3LLH5 STMicroelectronics, STS14N3LLH5 Datasheet - Page 5
![MOSFET N-CH 30V 14A SOIC-8](/photos/1/38/13851/497-8-soic_sml.jpg)
STS14N3LLH5
Manufacturer Part Number
STS14N3LLH5
Description
MOSFET N-CH 30V 14A SOIC-8
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STS14N3LLH5.pdf
(12 pages)
Specifications of STS14N3LLH5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
30V
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 4.5V
Input Capacitance (ciss) @ Vds
1500pF @ 25V
Power - Max
2.7W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N Channel
Continuous Drain Current Id
7A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
5mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Continuous Drain (id) @ 25° C
-
Other names
497-7027-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STS14N3LLH5
Manufacturer:
GPS
Quantity:
134
Part Number:
STS14N3LLH5
Manufacturer:
ST
Quantity:
20 000
STS14N3LLH5
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
d(on)
d(off)
RRM
I
SD
Q
t
SD
t
t
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 14166 Rev 4
V
R
(see Figure 13)
I
I
di/dt = 100 A/µs,
V
DD
SD
SD
G
DD
=4.7 Ω, V
Test conditions
=15 V, I
Test conditions
= 14 A, V
= 14 A,
= 25 V, Tj=150 °C
D
GS
= 7 A,
GS
=10 V
=0
Electrical characteristics
Min.
Min
-
-
-
-
-
Typ.
17.5
Typ.
14.5
22.7
1.4
25
9.3
4.5
Max
Max.
1.1
14
56
-
Unit
Unit
nC
ns
ns
ns
ns
ns
A
A
V
A
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