STB4NK60ZT4 STMicroelectronics, STB4NK60ZT4 Datasheet - Page 16

• Manufacturer Part Number: STB4NK60ZT4
• Description: MOSFET N-CH 600V 4A D2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STB4NK60ZT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 510pF @ 25V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 4 A
• Power Dissipation: 70000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 2A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 1.76ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2486-2

Package mechanical data
16/20
DIM.
D1
A1
A2
b4
E1
e1
L1
L2
L4
V2
c2
D
H
R
A
b
E
e
L
c
min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
0.60
0
1
o
TO-252 (DPAK) mechanical data
STB4NK60Zx, STD4NK60Zx, STP4NK60Z, STP4NK60ZFP
mm.
5.10
4.70
2.28
2.80
0.80
0.20
typ
0068772_G
10.10
max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
8
1
o