IRF6722MTR1PBF International Rectifier, IRF6722MTR1PBF Datasheet - Page 2
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IRF6722MTR1PBF
Manufacturer Part Number
IRF6722MTR1PBF
Description
MOSFET N-CH 30V 13A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6722MTR1PBF.pdf
(9 pages)
Specifications of IRF6722MTR1PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.7 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
2.4V @ 50µA
Gate Charge (qg) @ Vgs
17nC @ 4.5V
Input Capacitance (ciss) @ Vds
1300pF @ 15V
Power - Max
2.3W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric MP
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
10.8 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
56 A
Power Dissipation
42 W
Gate Charge Qg
11 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF6722MTR1PBFTR
Notes:
IRF6722MPbF
∆ΒV
∆V
Static @ T
BV
R
V
I
I
gfs
Q
Q
Q
R
t
t
t
t
C
C
C
Diode Characteristics
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
GS(th)
SD
DS(on)
g
Q
Q
Q
Q
sw
oss
G
iss
oss
rss
rr
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
GS(th)
DSS
gs1
gs2
gd
godr
DSS
/∆T
/∆T
J
J
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
g
gs2
+ Q
gd
)
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.4
30
25
1300
0.81
–––
-5.9
–––
–––
–––
–––
–––
490
150
–––
–––
4.7
8.0
1.8
2.4
1.2
4.3
3.5
5.5
1.4
7.8
9.5
6.1
23
11
11
11
19
26
10.8
-100
–––
–––
–––
150
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
110
7.7
2.4
1.0
2.5
1.0
17
52
29
39
mV/°C
mV/°C
mΩ
nC
nC
µA
nA
nC
pF
ns
ns
V
V
S
Ω
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
I
See Fig. 15
V
V
I
R
See Fig. 17
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 250A/µs
D
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
GS
DS
G
= 11A
= 11A
= 25°C, I
= 25°C, I
= 1.8Ω
= 0V, I
= 10V, I
= 4.5V, I
= V
= 24V, V
= 24V, V
= 20V
= -20V
= 15V, I
= 15V
= 4.5V
= 16V, V
= 15V, V
= 0V
= 15V
GS
, I
D
Conditions
D
Conditions
S
F
D
D
= 250µA
D
GS
GS
GS
GS
= 11A
= 11A, V
= 50µA
= 11A
= 13A
= 11A
= 0V
= 0V, T
= 0V
= 4.5V
i
i
D
i
www.irf.com
GS
= 1mA
J
= 125°C
i
= 0V
i