IRF6710S2TR1PBF International Rectifier, IRF6710S2TR1PBF Datasheet - Page 8
![MOSFET N-CH 25V 12A DIRECTFET](/photos/5/49/54920/irf6710s2tr1pbf_sml.jpg)
IRF6710S2TR1PBF
Manufacturer Part Number
IRF6710S2TR1PBF
Description
MOSFET N-CH 25V 12A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6710S2TR1PBF.pdf
(10 pages)
Specifications of IRF6710S2TR1PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.9 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
2.4V @ 25µA
Gate Charge (qg) @ Vgs
13nC @ 4.5V
Input Capacitance (ciss) @ Vds
1190pF @ 13V
Power - Max
1.8W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric S1
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
11.9 mOhms
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
37 A
Power Dissipation
15 W
Gate Charge Qg
8.8 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF6710S2TR1PBFTR
8
+
-
D.U.T
+
-
•
•
•
•
SD
Fig 19.
•
•
•
-
G
+
Optional additional pad to allow
interchangeability with S2
outline devices.
Mandatory pads to fit S1 outline.
HEXFET
D
D
+
-
G
®
Re-Applied
Voltage
Power MOSFETs
Reverse
Recovery
Current
S
S
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
G = GATE
D = DRAIN
S = SOURCE
SD
DS
Waveform
Waveform
D
D
Ripple ≤ 5%
Body Diode
Period
for N-Channel
Body Diode Forward
Diode Recovery
Current
dv/dt
Forward Drop
CL
di/dt
D =
Period
P.W.
V
V
I
SD
GS
DD
=10V
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