IRLB8721PBF International Rectifier, IRLB8721PBF Datasheet - Page 5

• Manufacturer Part Number: IRLB8721PBF
• Description: MOSFET N-CH 30V 62A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLB8721PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.7 mOhm @ 31A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 62A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 13nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1077pF @ 15V
• Power - Max: 65W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 16 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 62 A
• Power Dissipation: 65 W
• Mounting Style: Through Hole
• Gate Charge Qg: 7.6 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.001
0.01
0.1
80
60
40
20
10
Fig 9. Maximum Drain Current vs.
0
1
1E-006
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
Case Temperature
0.20
0.10
0.02
0.01
0.05
50
T C , CaseTemperature (°C)
SINGLE PULSE
( THERMAL RESPONSE )
75
1E-005
100
125
t 1 , Rectangular Pulse Duration (sec)
150
0.0001
175
τ
J
τ
J
τ
Fig 10. Threshold Voltage vs. Temperature
1
Ci= τi/Ri
τ
1
Ci
2.5
2.0
1.5
1.0
0.5
i/Ri
R
-75 -50 -25
1
R
1
0.001
τ
2
R
τ
2
2
R
2
R
T J , Temperature ( °C )
τ
3
3
R
0
τ
3
3
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
25
τ
R
4
τ
4
R
4
4
50
τ
C
0.01
τ
Ri (°C/W)
0.003454 13.68748
0.786312 0.001227
1.368218 0.007178
0.17246
75
I D = 1.0mA
I D = 250μA
I D = 25μA
100 125 150 175
τι (sec)
7.21E-05
5
0.1