IRLB8721PBF International Rectifier, IRLB8721PBF Datasheet - Page 5
![MOSFET N-CH 30V 62A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRLB8721PBF
Manufacturer Part Number
IRLB8721PBF
Description
MOSFET N-CH 30V 62A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRLB8721PBF.pdf
(9 pages)
Specifications of IRLB8721PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8.7 mOhm @ 31A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
62A
Vgs(th) (max) @ Id
2.35V @ 25µA
Gate Charge (qg) @ Vgs
13nC @ 4.5V
Input Capacitance (ciss) @ Vds
1077pF @ 15V
Power - Max
65W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
16 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
62 A
Power Dissipation
65 W
Mounting Style
Through Hole
Gate Charge Qg
7.6 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRLB8721PBF
Manufacturer:
INTERPON
Quantity:
67
Part Number:
IRLB8721PBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
0.001
0.01
0.1
80
60
40
20
10
Fig 9. Maximum Drain Current vs.
0
1
1E-006
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
Case Temperature
0.20
0.10
0.02
0.01
0.05
50
T C , CaseTemperature (°C)
SINGLE PULSE
( THERMAL RESPONSE )
75
1E-005
100
125
t 1 , Rectangular Pulse Duration (sec)
150
0.0001
175
τ
J
τ
J
τ
Fig 10. Threshold Voltage vs. Temperature
1
Ci= τi/Ri
τ
1
Ci
2.5
2.0
1.5
1.0
0.5
i/Ri
R
-75 -50 -25
1
R
1
0.001
τ
2
R
τ
2
2
R
2
R
T J , Temperature ( °C )
τ
3
3
R
0
τ
3
3
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
25
τ
R
4
τ
4
R
4
4
50
τ
C
0.01
τ
Ri (°C/W)
0.003454 13.68748
0.786312 0.001227
1.368218 0.007178
0.17246
75
I D = 1.0mA
I D = 250μA
I D = 25μA
100 125 150 175
τι (sec)
7.21E-05
5
0.1