STD36NH02L STMicroelectronics, STD36NH02L Datasheet - Page 5

• Manufacturer Part Number: STD36NH02L
• Description: MOSFET N-CH 24V 30A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD36NH02L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 24V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 860pF @ 15V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7966-2; STD36NH02L

STD36NH02L
Table 5.
Table 6.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
d(on)
d(off)
RRM
I
SD
Q
t
t
SD
t
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
V
R
(see Figure 13)
I
I
V
(see Figure 15)
SD
SD
DD
G
DD
=4.7Ω, V
= 15A, V
= 30A,di/dt = 100A/µs,
=10V, I
Test condictions
Test condictions
=15V, Tj=150°C
D
GS
= 15A,
GS
=10V
= 0
Electrical characteristics
Min
Min
Typ.
Typ.
1.3
24
16
70
22
15
8
Max
Max
120
1.5
30
Unit
Unit
ns
ns
ns
ns
nC
ns
A
A
V
A
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