IXTY44N10T IXYS, IXTY44N10T Datasheet - Page 4

MOSFET N-CH 100V 44A TO-252

IXTY44N10T

Manufacturer Part Number
IXTY44N10T
Description
MOSFET N-CH 100V 44A TO-252
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTY44N10T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
30 mOhm @ 22A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
44A
Vgs(th) (max) @ Id
4.5V @ 25µA
Gate Charge (qg) @ Vgs
33nC @ 10V
Input Capacitance (ciss) @ Vds
1262pF @ 25V
Power - Max
130W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.03 Ohms
Drain-source Breakdown Voltage
100 V
Continuous Drain Current
44 A
Power Dissipation
130 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
44
Rds(on), Max, Tj=25°c, (?)
0.03
Ciss, Typ, (pf)
1567
Qg, Typ, (nc)
27.4
Trr, Typ, (ns)
60
Trr, Max, (ns)
-
Pd, (w)
130
Rthjc, Max, (k/w)
1.15
Package Style
TO-252
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
120
100
100
80
60
40
20
70
60
50
40
30
20
10
10
0
0
0.4
4
0
0.5
4.5
f = 1 MHz
5
Fig. 9. Forward Voltage Drop of
0.6
5
10
0.7
Fig. 7. Input Admittance
T
Fig. 11. Capacitance
5.5
J
= 150ºC
Intrinsic Diode
0.8
15
V
V
V
6
GS
SD
DS
0.9
- Volts
- Volts
- Volts
6.5
20
T
C iss
C oss
T
C rss
1
J
J
= -40ºC
150ºC
= 25ºC
7
25ºC
25
1.1
7.5
1.2
30
8
1.3
35
8.5
1.4
1.5
40
9
10.00
1.00
0.10
0.01
30
27
24
21
18
15
12
10
0.00001
9
6
3
0
9
8
7
6
5
4
3
2
1
0
0
0
V
I
I
D
G
DS
= 10A
= 1mA
0.0001
10
= 50V
Fig. 12. Maximum Transient Thermal
5
Fig. 8. Transconductance
T
J
20
10
Q
= - 40ºC
Pulse Width - Seconds
Fig. 10. Gate Charge
0.001
G
- NanoCoulombs
150ºC
I
25ºC
D
Impedance
- Amperes
15
30
0.01
20
40
IXTP44N10T
IXTY44N10T
0.1
25
50
1
30
60
10
35
70

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