IRF630 STMicroelectronics, IRF630 Datasheet - Page 3

• Manufacturer Part Number: IRF630
• Description: MOSFET N-CH 200V 9A TO-220
• Manufacturer: STMicroelectronics
• Series: MESH OVERLAY™r
• Type: Power MOSFETr

Specifications of IRF630

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 75W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.4Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 9A
• Power Dissipation: 75W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 4 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Application: High current switching, uninterruptible power supply (UPS), DC-AC converters for telecom, industrial and lighting equipment
• Channel Type: N-Channel
• Current, Drain: 9 A
• Fall Time: 12 ns (Typ.)
• Gate Charge, Total: 31 nC
• Mounting And Package Type: TO-220 Package
• Operating And Storage Temperature: -65 to +150 °C
• Polarization: N-Channel
• Resistance, Drain To Source On: 0.35 Ohm
• Resistance, Thermal, Junction To Case: 1.67 °C⁄W (Max.)
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -65 °C
• Thermal Resistance, Junction To Ambient: 62.5 °C⁄W
• Time, Rise: 15 ns (Typ.)
• Time, Turn-on Delay: 10 ns
• Transconductance, Forward: 4 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Drain To Gate: 200 V
• Voltage, Forward, Diode: 1.5 V
• Voltage, Gate To Source: ±20 V
• Rise Time: 15 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2757-5

IRF630 - IRF630FP
1
Electrical ratings
Table 1.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 9A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Table 2.
Table 3.
Rthc-sink
Symbol
dv/dt
Symbol
R
Symbol
I
V
P
V
DM
R
V
thj-case
V
T
E
DGR
T
I
I
TOT
I
ISO
GS
thj-a
T
DS
stg
AR
D
D
AS
J
(2)
l
(3)
Absolute maximum ratings
Thermal data
Avalanche characteristics
Drain-source voltage (V
Drain-gate voltage (R
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Insulation winthstand voltage (DC)
Operating junction temperature
Storage temperature
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Thermal resistance case-sink typ
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
Parameter
Parameter
C
GS
= 25°C
Parameter
GS
= 20 kΩ)
= 0)
C
C
=100°C
= 25°C
TO-220
TO-220
5.7
0.6
36
75
1.67
--
9
-65 to 150
Value
Value
± 20
62.5
200
200
150
300
0.5
5
Value
160
TO-220FP
Electrical ratings
9
TO-220FP
5.7
2000
36
0.24
9
30
4.17
(1)
(1)
(1)
W/°C
°C/W
°C/W
°C/W
V/ns
Unit
Unit
Unit
°C
mJ
W
°C
V
V
V
V
A
A
A
A
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