IRF1010EZSTRLP International Rectifier, IRF1010EZSTRLP Datasheet - Page 5

• Manufacturer Part Number: IRF1010EZSTRLP
• Description: MOSFET N-CH 60V 75A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1010EZSTRLP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 51A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 86nC @ 10V
• Input Capacitance (ciss) @ Vds: 2810pF @ 25V
• Power - Max: 140W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF1010EZSTRLPTR

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100
0.001
90
80
70
60
50
40
30
20
10
0.01
0.1
0
10
1
1E-006
25
Fig 9. Maximum Drain Current vs.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
50
0.02
0.20
0.10
0.05
0.01
T C , Case Temperature (°C)
Case Temperature
75
SINGLE PULSE
( THERMAL RESPONSE )
Limited By Package
1E-005
100
125
150
t 1 , Rectangular Pulse Duration (sec)
0.0001
175
J
J
1
Ci= i Ri
1
Ci
2.5
2.0
1.5
1.0
0.5
Fig 10. Normalized On-Resistance
i Ri
-60 -40 -20 0
R
0.001
1
R
I D = 84A
V GS = 10V
1
2
R
2
T J , Junction Temperature (°C)
2
R
vs. Temperature
2
R
3
20 40 60 80 100 120 140 160 180
3
R
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
3
3
C
Ri (°C/W)
0.01
0.415
0.410
0.285
0.000246
0.000898
0.009546
i (sec)
5
0.1