IRFH5250TR2PBF International Rectifier, IRFH5250TR2PBF Datasheet - Page 5
![MOSFET N-CH 25V 45A PQFN](/photos/12/24/122414/8-qfn_sml.jpg)
IRFH5250TR2PBF
Manufacturer Part Number
IRFH5250TR2PBF
Description
MOSFET N-CH 25V 45A PQFN
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFH5250TR2PBF.pdf
(8 pages)
Specifications of IRFH5250TR2PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.15 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
45A
Vgs(th) (max) @ Id
2.35V @ 150µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
7174pF @ 13V
Power - Max
3.6W
Mounting Type
Surface Mount
Package / Case
8-VQFN
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.75 mOhms
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
45 A
Power Dissipation
3.6 W
Gate Charge Qg
52 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFH5250TR2PBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFH5250TR2PBF
Manufacturer:
International Rectifier
Quantity:
135
Part Number:
IRFH5250TR2PBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
Fig 14a. Unclamped Inductive Test Circuit
Fig 12. On-Resistance vs. Gate Voltage
4
3
2
1
0
Fig 15a. Switching Time Test Circuit
2
R G
4
20V
V GS, Gate -to -Source Voltage (V)
V DS
6
t p
≤ 0.1
≤ 1
8
I AS
D.U.T
T J = 25°C
0.01 Ω
L
10
T J = 125°C
12
14
15V
I D = 50A
16
DRIVER
+
-
18
+
-
V DD
20
A
Fig 13. Maximum Avalanche Energy vs. Drain Current
2000
1800
1600
1400
1200
1000
800
600
400
200
Fig 14b. Unclamped Inductive Waveforms
0
90%
V
25
10%
V
I
DS
AS
GS
Fig 15b. Switching Time Waveforms
Starting T J , Junction Temperature (°C)
50
t
d(on)
t
t p
75
r
100
TOP
BOTTOM 50A
t
d(off)
V
(BR)DSS
125
t
f
24A
I D
18A
150
5