IRFH5250TR2PBF International Rectifier, IRFH5250TR2PBF Datasheet - Page 5

• Manufacturer Part Number: IRFH5250TR2PBF
• Description: MOSFET N-CH 25V 45A PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH5250TR2PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.15 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 45A
• Vgs(th) (max) @ Id: 2.35V @ 150µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 7174pF @ 13V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-VQFN
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 45 A
• Power Dissipation: 3.6 W
• Gate Charge Qg: 52 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH5250TR2PBFTR

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Fig 14a. Unclamped Inductive Test Circuit
Fig 12. On-Resistance vs. Gate Voltage
4
3
2
1
0
Fig 15a. Switching Time Test Circuit
2
R G
4
20V
V GS, Gate -to -Source Voltage (V)
V DS
6
t p
≤ 0.1
≤ 1
8
I AS
D.U.T
T J = 25°C
0.01 Ω
L
10
T J = 125°C
12
14
15V
I D = 50A
16
DRIVER
+
-
18
+
-
V DD
20
A
Fig 13. Maximum Avalanche Energy vs. Drain Current
2000
1800
1600
1400
1200
1000
800
600
400
200
Fig 14b. Unclamped Inductive Waveforms
0
90%
V
25
10%
V
I
DS
AS
GS
Fig 15b. Switching Time Waveforms
Starting T J , Junction Temperature (°C)
50
t
d(on)
t
t p
75
r
100
TOP
BOTTOM 50A
t
d(off)
V
(BR)DSS
125
t
f
24A
I D
18A
150
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