IRF7416PBF International Rectifier, IRF7416PBF Datasheet - Page 4
![MOSFET P-CH 30V 10A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7416PBF
Manufacturer Part Number
IRF7416PBF
Description
MOSFET P-CH 30V 10A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7416PBF.pdf
(9 pages)
Specifications of IRF7416PBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 5.6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
92nC @ 10V
Input Capacitance (ciss) @ Vds
1700pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
35 mOhms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 10 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
60 ns
Gate Charge Qg
61 nC
Minimum Operating Temperature
- 55 C
Rise Time
49 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7416PBF
Manufacturer:
IR
Quantity:
20 000
4
4000
3000
2000
1000
100
10
1
0
0.4
1
T = 150°C
-V
V
J
DS
SD
0.6
V
C
C
C
C
C
, Drain-to-Source Voltage (V)
C
, Source-to-Drain Voltage (V)
GS
iss
rss
oss
oss
rss
iss
= 0V,
= C
= C
= C
gs
gd
ds
+ C
+ C
0.8
10
gd
gd
f = 1MHz
T = 25°C
J
, C
ds
1.0
SHORTED
V
GS
= 0V
100
1.2
A
A
100
10
1
20
16
12
0.1
8
4
0
0
T
T
Single Pulse
A
J
I
D
= 25 C
= 150 C
= -5.6A
OPERATION IN THIS AREA LIMITED
-V
DS
°
°
20
Q , Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
G
1
BY R
40
V
V
DS
DS
DS(on)
= -24V
= -15V
FOR TEST CIRCUIT
60
SEE FIGURE 9
10
www.irf.com
80
100us
1ms
10ms
100
100
A