STP6NK50Z STMicroelectronics, STP6NK50Z Datasheet - Page 7
![MOSFET N-CH 500V 5.6A TO-220](/photos/1/39/13943/to-220_sml.jpg)
STP6NK50Z
Manufacturer Part Number
STP6NK50Z
Description
MOSFET N-CH 500V 5.6A TO-220
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STD6NK50ZT4.pdf
(12 pages)
Specifications of STP6NK50Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.2 Ohm @ 2.8A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
5.6A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
24.6nC @ 10V
Input Capacitance (ciss) @ Vds
690pF @ 25V
Power - Max
90W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.2 Ohms
Forward Transconductance Gfs (max / Min)
4.3 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
5.6 A
Power Dissipation
90 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4385-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP6NK50Z
Manufacturer:
STMicroelectronics
Quantity:
1 796
Company:
Part Number:
STP6NK50Z
Manufacturer:
ST
Quantity:
12 500
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
STP6NK50Z - STF6NK50Z - STD6NK50Z
7/12