IRL520NPBF International Rectifier, IRL520NPBF Datasheet - Page 9

• Manufacturer Part Number: IRL520NPBF
• Description: MOSFET N-CH 100V 10A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL520NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 180 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 5V
• Input Capacitance (ciss) @ Vds: 440pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 10 A
• Gate Charge, Total: 20 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 48 W
• Resistance, Drain To Source On: 0.18 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 23 ns
• Time, Turn-on Delay: 4 ns
• Transconductance, Forward: 3.1 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±16 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 10 A
• Mounting Style: Through Hole
• Gate Charge Qg: 13.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRL520NPBF

Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/